banner_page

TTA1943(Q)

TTA1943(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-TTA1943(Q)
  • Package: TO-3PL
  • Datasheet: -
  • Stock: 645
  • Description: TTA1943(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150W
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Gain Bandwidth Product 30MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage -3V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Height 26mm
Length 20.5mm
Width 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good