Parameters | |
---|---|
Average Rectified Current | 6A |
Number of Phases | 1 |
Reverse Recovery Time | 30 ns |
Peak Reverse Current | 5μA |
Max Repetitive Reverse Voltage (Vrrm) | 150V |
Peak Non-Repetitive Surge Current | 125A |
Radiation Hardening | No |
RoHS Status | Non-RoHS Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | B, Axial |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 1996 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 2 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
HTS Code | 8541.10.00.80 |
Terminal Form | WIRE |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5μA @ 150V |
Voltage - Forward (Vf) (Max) @ If | 925mV @ 6A |
Case Connection | ISOLATED |
Forward Current | 6A |
Operating Temperature - Junction | 175°C Max |
Output Current-Max | 6A |
Application | EFFICIENCY |
Forward Voltage | 925mV |
Max Reverse Voltage (DC) | 150V |