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UGB8JCT-E3/81

UGB8JCT-E3/81 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available at Feilidi


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-UGB8JCT-E3/81
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 773
  • Description: UGB8JCT-E3/81 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available at Feilidi (Kg)

Details

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Parameters
Forward Voltage 1.75V
Max Reverse Voltage (DC) 600V
Average Rectified Current 4A
Number of Phases 1
Reverse Recovery Time 50 ns
Peak Reverse Current 30μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 65A
Reverse Voltage 600V
Diode Configuration 1 Pair Common Cathode
Recovery Time 50 ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 30μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.75V @ 4A
Forward Current 8A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 65A
Output Current-Max 8A
Application EFFICIENCY
See Relate Datesheet

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