UGB8JT-E3/45
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Base Part Number | UGB8J |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 30μA @ 600V |
| Voltage - Forward (Vf) (Max) @ If | 1.75V @ 8A |
| Forward Current | 8A |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 100A |
| Output Current-Max | 8A |
| Application | EFFICIENCY |
| Max Reverse Voltage (DC) | 600V |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 30μA |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| Peak Non-Repetitive Surge Current | 100A |
| Reverse Voltage | 600V |
| Recovery Time | 50 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
