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UH4PBCHM3_A/H

DIODE GEN PURP 100V 2A TO277A


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-UH4PBCHM3_A/H
  • Package: TO-277, 3-PowerDFN
  • Datasheet: PDF
  • Stock: 519
  • Description: DIODE GEN PURP 100V 2A TO277A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-277, 3-PowerDFN
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, eSMP®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F3
Operating Temperature (Max) 175°C
Number of Elements 2
Configuration COMMON CATHODE, 2 ELEMENTS
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.05V @ 2A
Case Connection CATHODE
Operating Temperature - Junction -55°C~175°C
Output Current-Max 2A
Application ULTRA FAST RECOVERY
Voltage - DC Reverse (Vr) (Max) 100V
Max Reverse Voltage (DC) 100V
Average Rectified Current 2A
Number of Phases 1
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-277A
Capacitance @ Vr, F 21pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 40A
Reverse Current-Max 5μA
RoHS Status ROHS3 Compliant
See Relate Datesheet

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