UMH2N-TP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR |
| Subcategory | BIP General Purpose Small Signal |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | UMH2N |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max | 150mW |
| Polarity/Channel Type | NPN |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 250MHz |
| Frequency - Transition | 250MHz |
| Power Dissipation-Max (Abs) | 0.15W |
| Resistor - Base (R1) | 47k Ω |
| Resistor - Emitter Base (R2) | 47k Ω |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
