Parameters | |
---|---|
Gain Bandwidth Product | 180MHz |
Transistor Type | 2 NPN (Dual) |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 150mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
Collector Emitter Breakdown Voltage | 50V |
Max Frequency | 100MHz |
Transition Frequency | 180MHz |
Collector Emitter Saturation Voltage | 400mV |
Max Breakdown Voltage | 50V |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 120 |
Continuous Collector Current | 150mA |
VCEsat-Max | 0.4 V |
Height | 900μm |
Length | 2mm |
Width | 1.25mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
JESD-609 Code | e2 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Type | General Purpose |
Terminal Finish | Tin/Copper (Sn/Cu) |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 50V |
Max Power Dissipation | 150mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 150mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | *MX1 |
Pin Count | 6 |
Number of Elements | 2 |
Polarity | NPN |
Element Configuration | Dual |
Power Dissipation | 150mW |
Transistor Application | AMPLIFIER |