UMZ1NT1G
| Parameters | |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 2μA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 114MHz |
| Collector Emitter Saturation Voltage | 250mV |
| Max Breakdown Voltage | 50V |
| Frequency - Transition | 114MHz 142MHz |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 200 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | BIP General Purpose Small Signal |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 250mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Frequency | 114MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | UMZ1N |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP, NPN |
| Element Configuration | Dual |
| Power Dissipation | 385mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 114MHz |
| Transistor Type | NPN, PNP |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 200mA |
See Relate Datesheet
