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US1M-E3/5AT

US1M-E3/5AT datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available at Feilidi


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-US1M-E3/5AT
  • Package: DO-214AC, SMA
  • Datasheet: PDF
  • Stock: 347
  • Description: US1M-E3/5AT datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available at Feilidi (Kg)

Details

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Parameters
Voltage - Forward (Vf) (Max) @ If 1.7V @ 1A
Forward Current 1A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 30A
Voltage - DC Reverse (Vr) (Max) 1000V
Forward Voltage 1.7V
Max Reverse Voltage (DC) 1kV
Average Rectified Current 1A
Reverse Recovery Time 75 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Capacitance @ Vr, F 10pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 30A
Reverse Voltage 1kV
Max Forward Surge Current (Ifsm) 30A
Recovery Time 75 ns
Max Junction Temperature (Tj) 150°C
Height 2.29mm
Length 4.5mm
Width 2.79mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Number of Pins 2
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Capacitance 10pF
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number US1M
Pin Count 2
Number of Elements 1
Voltage 1kV
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current 1A
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 1000V
See Relate Datesheet

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