US1MHE3_A/H
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Base Part Number | US1M |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 10μA @ 1000V |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 1A |
| Forward Current | 1A |
| Operating Temperature - Junction | -55°C~150°C |
| Output Current-Max | 1A |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Max Reverse Voltage (DC) | 1kV |
| Average Rectified Current | 1A |
| Reverse Recovery Time | 75 ns |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Capacitance @ Vr, F | 10pF @ 4V 1MHz |
| Peak Non-Repetitive Surge Current | 30A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
