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US1MHE3_A/I

US1MHE3_A/I datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available at Feilidi


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-US1MHE3_A/I
  • Package: DO-214AC, SMA
  • Datasheet: PDF
  • Stock: 455
  • Description: US1MHE3_A/I datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE
Terminal Position DUAL
Terminal Form C BEND
Base Part Number US1M
JESD-30 Code R-PDSO-C2
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 1A
Forward Current 1A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 30A
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 1000V
Forward Voltage 1.7V
Max Reverse Voltage (DC) 1kV
Average Rectified Current 1A
Reverse Recovery Time 75 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Capacitance @ Vr, F 10pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 30A
Recovery Time 75 ns
Reverse Voltage (DC) 1kV
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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