US2DA-TP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.80 |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| JESD-30 Code | R-PDSO-C2 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 200V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 2A |
| Operating Temperature - Junction | -50°C~150°C |
| Output Current-Max | 2A |
| Application | EFFICIENCY |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 2A |
| Number of Phases | 1 |
| Reverse Recovery Time | 50ns |
| Rep Pk Reverse Voltage-Max | 200V |
| Capacitance @ Vr, F | 28pF @ 4V 1MHz |
| Non-rep Pk Forward Current-Max | 50A |
| Reverse Current-Max | 5μA |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
