V10P10HM3/86A
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | eSMP®, TMBS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Additional Feature | FREE WHEELING DIODE, LOW POWER LOSS |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Base Part Number | V10P10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Common Anode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 150μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 680mV @ 10A |
| Case Connection | CATHODE |
| Forward Current | 10A |
| Max Reverse Leakage Current | 150μA |
| Operating Temperature - Junction | -40°C~150°C |
| Max Surge Current | 180A |
| Application | EFFICIENCY |
| Forward Voltage | 680mV |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 10A |
| Number of Phases | 1 |
| Peak Reverse Current | 150μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| JEDEC-95 Code | TO-277A |
| Peak Non-Repetitive Surge Current | 180A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
