Parameters | |
---|---|
Max Power Dissipation | 100mW |
Orientation | Top View |
Number of Functions | 1 |
Polarity | NPN |
Configuration | SINGLE |
Number of Channels | 1 |
Power Dissipation | 100mW |
Viewing Angle | 30° |
Optoelectronic Device Type | PHOTO TRANSISTOR |
Lens Style | Domed |
Breakdown Voltage | 20V |
Collector Emitter Voltage (VCEO) | 7V |
Max Collector Current | 50mA |
Collector Emitter Breakdown Voltage | 20V |
Lens Color | Black |
Power Consumption | 100mW |
Wavelength | 860nm |
Collector Emitter Saturation Voltage | 400mV |
Max Breakdown Voltage | 20V |
On-State Current-Max | 0.05A |
Dark Current | 100nA |
Infrared Range | YES |
Light Current-Nom | 6mA |
Height | 2.77mm |
Length | 2.3mm |
Width | 2.3mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 2-SMD, Z-Bend |
Number of Pins | 2 |
Shape | ROUND |
Operating Temperature | -40°C~100°C TA |
Packaging | Tape & Reel (TR) |
Published | 2008 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 2A (4 Weeks) |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | DAY LIGHT, HIGH SENSITIVITY |
Subcategory | Photo Transistors |