Parameters | |
---|---|
HTS Code | 8542.33.00.01 |
Subcategory | FET RF Small Signal |
Current Rating (Amps) | 100mA |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Frequency | 10GHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | R-XBCC-N3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 20mA |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | E-pHEMT |
Gain | 9dB |
Drain Current-Max (Abs) (ID) | 0.1A |
DS Breakdown Voltage-Min | 5V |
Power - Output | 12dBm |
FET Technology | HIGH ELECTRON MOBILITY |
Noise Figure | 0.81dB |
Voltage - Test | 3V |
Power Dissipation Ambient-Max | 0.3W |
RoHS Status | RoHS Compliant |
Package / Case | 0402 (1005 Metric) |
Surface Mount | YES |
Transistor Element Material | GALLIUM ARSENIDE |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated | 5V |