Parameters | |
---|---|
Height | 5.33mm |
Packaging | Bulk |
Published | 2013 |
Length | 5.21mm |
Width | 4.19mm |
JESD-609 Code | e3 |
Part Status | Active |
Radiation Hardening | No |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW THRESHOLD |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.2 Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 640mA Tj |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Factory Lead Time | 1 Week |
Vgs (Max) | ±30V |
Mount | Through Hole |
Continuous Drain Current (ID) | 640mA |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Gate to Source Voltage (Vgs) | 30V |
Number of Pins | 3 |
Drain Current-Max (Abs) (ID) | 0.64A |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Drain to Source Breakdown Voltage | 30V |
Operating Temperature | -55°C~150°C TJ |
Feedback Cap-Max (Crss) | 50 pF |