Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 1997 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 5Ohm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Powers |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 150mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 330mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 330mW |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 150mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 150mA |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Dual Supply Voltage | 60V |
Nominal Vgs | 2.5 V |
Feedback Cap-Max (Crss) | 5 pF |
Height | 1mm |
Length | 3.05mm |
Width | 3.05mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |