banner_page

VN1206L-G

MOSFET N-CH 120V 0.23A TO92-3


  • Manufacturer: Microchip Technology
  • Nocochips NO: 536-VN1206L-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 963
  • Description: MOSFET N-CH 120V 0.23A TO92-3 (Kg)

Details

Tags

Parameters
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Factory Lead Time 1 Week
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Mount Through Hole
Current - Continuous Drain (Id) @ 25°C 230mA Tj
Rise Time 8ns
Mounting Type Through Hole
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 30V
Number of Pins 3
Drain-source On Resistance-Max 6Ohm
Drain to Source Breakdown Voltage 120V
Feedback Cap-Max (Crss) 20 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
Weight 453.59237mg
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good