Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | LOW THRESHOLD |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12 Ω @ 100mA, 4.5V |
Vgs(th) (Max) @ Id | 1.8V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 160mA Tj |
Rise Time | 20ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 65 ns |
Turn-Off Delay Time | 65 ns |
Continuous Drain Current (ID) | 160mA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 400V |
Height | 5.33mm |
Length | 5.21mm |
Width | 4.19mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |