Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | LOW THRESHOLD |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 360mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 360mW |
Turn On Delay Time | 4 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 120mA Tj |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 5 ns |
Continuous Drain Current (ID) | 120mA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Feedback Cap-Max (Crss) | 8 pF |
Height | 950μm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |