VS-10ETS08SPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Common Anode |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 50μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 10A |
| Case Connection | CATHODE |
| Forward Current | 10A |
| Operating Temperature - Junction | -40°C~150°C |
| Max Surge Current | 200A |
| Application | HIGH VOLTAGE POWER |
| Forward Voltage | 1.1V |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 10A |
| Number of Phases | 1 |
| Peak Reverse Current | 50μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Peak Non-Repetitive Surge Current | 200A |
| Reverse Voltage | 800V |
| Max Forward Surge Current (Ifsm) | 200A |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
