VS-10MQ100NPBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | 10MQ100 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 100μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 780mV @ 1A |
| Forward Current | 2.1A |
| Max Reverse Leakage Current | 100μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 120A |
| Output Current-Max | 1.5A |
| Application | HIGH POWER |
| Current - Average Rectified (Io) | 1A |
| Forward Voltage | 680mV |
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 2.1A |
| Number of Phases | 1 |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Capacitance @ Vr, F | 38pF @ 10V 1MHz |
| Peak Non-Repetitive Surge Current | 120A |
| Max Forward Surge Current (Ifsm) | 120A |
| Natural Thermal Resistance | 80 °C/W |
| Height | 2.2352mm |
| Length | 4.5974mm |
| Width | 2.8956mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
