VS-16CTQ100-1PBF
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREEWHEELING DIODE |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 16CTQ100 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 550μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 720mV @ 8A |
| Forward Current | 16A |
| Max Reverse Leakage Current | 550μA |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 850A |
| Application | HIGH POWER |
| Current - Average Rectified (Io) | 8A |
| Number of Phases | 1 |
| Reverse Recovery Time | 10 ns |
| Peak Reverse Current | 550μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 850A |
| Diode Configuration | 1 Pair Common Cathode |
| Height | 9.65mm |
| Length | 10.67mm |
| Width | 4.83mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
