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VS-16F100

DIODE GEN PURP 1KV 16A DO203AA


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-VS-16F100
  • Package: DO-203AA, DO-4, Stud
  • Datasheet: PDF
  • Stock: 978
  • Description: DIODE GEN PURP 1KV 16A DO203AA (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis, Stud
Mounting Type Chassis, Stud Mount
Package / Case DO-203AA, DO-4, Stud
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form SOLDER LUG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MUPM-D1
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 12mA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.23V @ 50A
Case Connection CATHODE
Forward Current 16A
Operating Temperature - Junction -65°C~175°C
Max Surge Current 370A
Application GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max) 1000V
Forward Voltage 1.23V
Max Reverse Voltage (DC) 1kV
Average Rectified Current 16A
Number of Phases 1
Peak Reverse Current 12mA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Peak Non-Repetitive Surge Current 370A
Reverse Voltage 1kV
Natural Thermal Resistance 0.5 °C/W
Diameter 11mm
Length 31.8mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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