VS-1KAB10E
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-Square, D-38 |
| Number of Pins | 4 |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Terminal Position | DUAL |
| Terminal Form | WIRE |
| Current Rating | 1.5A |
| Base Part Number | 1KAB*E |
| Number of Elements | 1 |
| Element Configuration | Single |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 100V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1.2A |
| Forward Current | 1.2A |
| Max Reverse Leakage Current | 10μA |
| Max Surge Current | 52A |
| Forward Voltage | 1.1V |
| Number of Phases | 1 |
| Peak Reverse Current | 10μA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Peak Non-Repetitive Surge Current | 52A |
| Height | 10mm |
| Length | 9.5mm |
| Width | 9.5mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
