VS-1N1183RA
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis, Stud |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | DO-203AB, DO-5, Stud |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2011 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 1 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
| Max Operating Temperature | 190°C |
| Min Operating Temperature | -65°C |
| Additional Feature | LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Position | UPPER |
| Terminal Form | SOLDER LUG |
| Base Part Number | 1N1183 |
| JESD-30 Code | O-MUPM-D1 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard, Reverse Polarity |
| Current - Reverse Leakage @ Vr | 2.5mA @ 50V |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 126A |
| Forward Current | 40A |
| Operating Temperature - Junction | -65°C~200°C |
| Max Surge Current | 800A |
| Application | POWER |
| Forward Voltage | 1.3V |
| Max Reverse Voltage (DC) | 50V |
| Average Rectified Current | 40A |
| Number of Phases | 1 |
| Peak Reverse Current | 2.5mA |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Peak Non-Repetitive Surge Current | 800A |
| Reverse Voltage | 50V |
| Max Forward Surge Current (Ifsm) | 800A |
| Natural Thermal Resistance | 0.25 °C/W |
| Height | 22.9mm |
| Length | 20.02mm |
| Width | 17.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
