Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis, Stud |
Mounting Type | Chassis, Stud Mount |
Package / Case | DO-203AB, DO-5, Stud |
Number of Pins | 2 |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 1 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
Max Operating Temperature | 190°C |
Min Operating Temperature | -65°C |
Additional Feature | LOW LEAKAGE CURRENT |
HTS Code | 8541.10.00.80 |
Subcategory | Rectifier Diodes |
Terminal Position | UPPER |
Terminal Form | SOLDER LUG |
Base Part Number | 1N1184 |
JESD-30 Code | O-MUPM-D1 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Diode Type | Standard, Reverse Polarity |
Current - Reverse Leakage @ Vr | 10mA @ 100V |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 110A |
Forward Current | 35A |
Operating Temperature - Junction | -65°C~190°C |
Max Surge Current | 400A |
Application | POWER |
Forward Voltage | 1.7V |
Max Reverse Voltage (DC) | 100V |
Average Rectified Current | 35A |
Number of Phases | 1 |
Peak Reverse Current | 10mA |
Max Repetitive Reverse Voltage (Vrrm) | 100V |
Peak Non-Repetitive Surge Current | 400A |
Reverse Voltage | 100V |
Max Forward Surge Current (Ifsm) | 500A |
Natural Thermal Resistance | 0.25 °C/W |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |