VS-20ETS08S-M3
| Parameters | |
|---|---|
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 20A |
| Case Connection | CATHODE |
| Operating Temperature - Junction | -40°C~150°C |
| Application | HIGH VOLTAGE |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 20A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 300A |
| Reverse Current-Max | 100μA |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2017 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.10.00.80 |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
See Relate Datesheet
