VS-30CTQ080-1PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Additional Feature | FREEWHEELING DIODE, HIGH RELIABILITY |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 550μA @ 80V |
| Voltage - Forward (Vf) (Max) @ If | 860mV @ 15A |
| Forward Current | 30A |
| Max Reverse Leakage Current | 2mA |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 850A |
| Application | HIGH POWER |
| Current - Average Rectified (Io) | 15A |
| Number of Phases | 1 |
| Peak Reverse Current | 550μA |
| Max Repetitive Reverse Voltage (Vrrm) | 80V |
| Peak Non-Repetitive Surge Current | 850A |
| Diode Configuration | 1 Pair Common Cathode |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
