VS-31DQ09
| Parameters | |
|---|---|
| Max Reverse Leakage Current | 1mA |
| Operating Temperature - Junction | -40°C~150°C |
| Max Surge Current | 210A |
| Application | GENERAL PURPOSE |
| Forward Voltage | 850mV |
| Max Reverse Voltage (DC) | 90V |
| Average Rectified Current | 3.3A |
| Number of Phases | 1 |
| Peak Reverse Current | 1mA |
| Max Repetitive Reverse Voltage (Vrrm) | 90V |
| Peak Non-Repetitive Surge Current | 210A |
| Max Forward Surge Current (Ifsm) | 210A |
| Natural Thermal Resistance | 80 °C/W |
| Diameter | 5.8mm |
| Length | 9.9822mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | C-16, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2001 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Additional Feature | FREE WHEELING DIODE |
| Terminal Form | WIRE |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1mA @ 90V |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 3A |
| Case Connection | ISOLATED |
| Forward Current | 3.3A |
See Relate Datesheet
