Parameters | |
---|---|
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Bulk |
Published | 2016 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Additional Feature | UL RECOGNIZED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PUFM-X4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 789W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7m Ω @ 150A, 10V |
Vgs(th) (Max) @ Id | 5.1V @ 500μA |
Input Capacitance (Ciss) (Max) @ Vds | 21000pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 220A Tc |
Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
Drain to Source Voltage (Vdss) | 200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Continuous Drain Current (ID) | 220A |
Drain-source On Resistance-Max | 0.007Ohm |
Pulsed Drain Current-Max (IDM) | 520A |
DS Breakdown Voltage-Min | 200V |
Avalanche Energy Rating (Eas) | 1200 mJ |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Screw |