VS-GA200TH60S
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2015 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel (Ni) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.042kW |
| Number of Elements | 1 |
| Configuration | Half Bridge |
| Power - Max | 1042W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.9V |
| Max Collector Current | 260A |
| Current - Collector Cutoff (Max) | 5μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 13.1nF |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A (Typ) |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 13.1nF @ 25V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
