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VS-GB100TP120N

IGBT 1200V 200A 650W INT-A-PAK


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-VS-GB100TP120N
  • Package: INT-A-Pak
  • Datasheet: -
  • Stock: 486
  • Description: IGBT 1200V 200A 650W INT-A-PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Operating Temperature 150°C TJ
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 650W
Configuration Half Bridge
Power - Max 650W
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 200A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.43nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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