VS-GB200TH120N
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Operating Temperature | 150°C TJ |
| Published | 2015 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel (Ni) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.136kW |
| Number of Elements | 1 |
| Configuration | Half Bridge |
| Power - Max | 1136W |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.35V |
| Max Collector Current | 360A |
| Current - Collector Cutoff (Max) | 5mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 14.9nF |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 200A |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 14.9nF @ 25V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
