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VS-GT100TP120N

IGBT 1200V 180A 652W INT-A-PAK


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-VS-GT100TP120N
  • Package: INT-A-PAK (3 + 4)
  • Datasheet: PDF
  • Stock: 971
  • Description: IGBT 1200V 180A 652W INT-A-PAK (Kg)

Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Operating Temperature 175°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish NICKEL (197)
Max Power Dissipation 652W
Configuration Half Bridge
Power - Max 652W
Input Standard
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 180A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 12.8nF
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A
IGBT Type Trench
NTC Thermistor No
Input Capacitance (Cies) @ Vce 12.8nF @ 30V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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