Parameters |
Max Repetitive Reverse Voltage (Vrrm) |
100V |
Peak Non-Repetitive Surge Current |
850A |
Diode Configuration |
1 Pair Common Cathode |
Max Forward Surge Current (Ifsm) |
850A |
Height |
4.83mm |
Length |
10.67mm |
Width |
9.65mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins |
3 |
Diode Element Material |
SILICON |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN (SN) - WITH NICKEL (NI) BARRIER |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-65°C |
Additional Feature |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
HTS Code |
8541.10.00.80 |
Subcategory |
Rectifier Diodes |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
10 |
Base Part Number |
MBRB20100CT |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
2 |
Element Configuration |
Common Cathode |
Speed |
Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type |
Schottky |
Current - Reverse Leakage @ Vr |
100μA @ 100V |
Voltage - Forward (Vf) (Max) @ If |
800mV @ 10A |
Forward Current |
20A |
Max Reverse Leakage Current |
100μA |
Operating Temperature - Junction |
-65°C~150°C |
Max Surge Current |
850A |
Application |
HIGH POWER |
Forward Voltage |
950mV |
Max Reverse Voltage (DC) |
100V |
Average Rectified Current |
10A |
Number of Phases |
1 |
Peak Reverse Current |
100μA |