VS-MBRD660CTPBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Additional Feature | FREE WHEELING DIODE, HIGH RELIABILITY |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Base Part Number | MBRD660CT |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 100μA @ 60V |
| Voltage - Forward (Vf) (Max) @ If | 650mV @ 3A |
| Forward Current | 6A |
| Max Reverse Leakage Current | 100μA |
| Operating Temperature - Junction | -40°C~150°C |
| Max Surge Current | 490A |
| Application | HIGH POWER |
| Forward Voltage | 650mV |
| Max Reverse Voltage (DC) | 60V |
| Average Rectified Current | 3A |
| Number of Phases | 1 |
| Peak Reverse Current | 100μA |
| Max Repetitive Reverse Voltage (Vrrm) | 60V |
| Peak Non-Repetitive Surge Current | 490A |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 490A |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
