Parameters | |
---|---|
Terminal Form | UNSPECIFIED |
Current Rating | 100A |
JESD-30 Code | R-PUFM-X3 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 10mA @ 1200V |
Voltage - Forward (Vf) (Max) @ If | 1.55V @ 314A |
Case Connection | ISOLATED |
Forward Current | 100A |
Operating Temperature - Junction | -40°C~150°C |
Application | HIGH VOLTAGE POWER |
Circuit Type | Diodes |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Forward Voltage | 1.45V |
Max Reverse Voltage (DC) | 1.2kV |
Average Rectified Current | 100A |
Number of Phases | 1 |
Peak Reverse Current | 10mA |
Max Repetitive Reverse Voltage (Vrrm) | 1.2kV |
RMS Current (Irms) | 157A |
Peak Non-Repetitive Surge Current | 2.115kA |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | ADD-A-PAK (3) |
Number of Pins | 2 |
Weight | 110.000005g |
Diode Element Material | SILICON |
Packaging | Bulk |
Published | 2008 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -40°C |
Additional Feature | UL RECOGNIZED |
HTS Code | 8541.10.00.80 |
Terminal Position | UPPER |