Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | E2 |
Number of Pins | 11 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~125°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Terminal Finish | Gold (Au) - with Nickel (Ni) barrier |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Technology | Standard |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | VUB |
Pin Count | 19 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Diode Type | Three Phase (Braking) |
Current - Reverse Leakage @ Vr | 100μA @ 1600V |
Voltage - Forward (Vf) (Max) @ If | 2.76V @ 30A |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |
Current - Average Rectified (Io) | 116A |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 95A |
Power Dissipation-Max (Abs) | 380W |
Voltage - Peak Reverse (Max) | 1.6kV |
Gate-Emitter Voltage-Max | 20V |
VCEsat-Max | 3.5 V |
RoHS Status | ROHS3 Compliant |