Parameters | |
---|---|
Number of Elements | 1 |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN THERMISTOR |
Diode Type | Three Phase |
Current - Reverse Leakage @ Vr | 300μA @ 1200V |
Voltage - Forward (Vf) (Max) @ If | 1.59V @ 150A |
Case Connection | ISOLATED |
Max Reverse Leakage Current | 300μA |
Max Surge Current | 650A |
Forward Voltage | 1.59V |
Average Rectified Current | 121A |
Number of Phases | 3 |
Peak Non-Repetitive Surge Current | 650A |
Non-rep Pk Forward Current-Max | 580A |
Voltage - Peak Reverse (Max) | 1.2kV |
Height | 17mm |
Length | 93mm |
Width | 40.4mm |
RoHS Status | ROHS3 Compliant |
Mount | Chassis Mount, Through Hole |
Mounting Type | Chassis Mount |
Package / Case | V2-PAK |
Number of Pins | 9 |
Diode Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2011 |
JESD-609 Code | e4 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 9 |
Terminal Finish | Gold (Au) - with Nickel (Ni) barrier |
Additional Feature | UL RECOGNIZED |
Subcategory | Bridge Rectifier Diodes |
Technology | Standard |
Terminal Position | UPPER |
Terminal Form | PIN/PEG |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |