Parameters | |
---|---|
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | FO-T-A |
Diode Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2000 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Terminal Finish | Matte Tin (Sn) |
HTS Code | 8541.10.00.80 |
Subcategory | Bridge Rectifier Diodes |
Technology | Standard |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT APPLICABLE |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
Base Part Number | VUO85 |
JESD-30 Code | R-PUFM-X11 |
Qualification Status | Not Qualified |
Number of Elements | 6 |
Configuration | BRIDGE, 6 ELEMENTS |
Diode Type | Three Phase |
Current - Reverse Leakage @ Vr | 500μA @ 1200V |
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 150A |
Case Connection | ISOLATED |
Max Reverse Leakage Current | 500μA |
Max Surge Current | 750A |
Average Rectified Current | 85A |
Number of Phases | 3 |
Voltage - Peak Reverse (Max) | 1.2kV |
Height | 17mm |
Length | 80mm |
Width | 29mm |
RoHS Status | ROHS3 Compliant |