WPH4003-1E
| Parameters | |
|---|---|
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 1.7kV |
| Pulsed Drain Current-Max (IDM) | 6A |
| Avalanche Energy Rating (Eas) | 49 mJ |
| Height | 24.5mm |
| Length | 15.5mm |
| Width | 5.5mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3W Ta 55W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 55W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 10.5 Ω @ 1.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 21ns |
| Drain to Source Voltage (Vdss) | 1700V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 55 ns |
| Turn-Off Delay Time | 200 ns |
| Continuous Drain Current (ID) | 3A |
See Relate Datesheet
