Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | E-Line-3, Formed Leads |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~200°C TJ |
Packaging | Tape & Box (TB) |
Published | 1997 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN |
HTS Code | 8541.21.00.75 |
Voltage - Rated DC | 15V |
Max Power Dissipation | 350mW |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 25mA |
Frequency | 1.3GHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZTX325 |
Pin Count | 3 |
JESD-30 Code | R-PSIP-W3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 1.3 GHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 15V |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2mA 1V |
Collector Emitter Breakdown Voltage | 15V |
Gain | 53dB |
Transition Frequency | 1300MHz |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 2.5V |
Continuous Collector Current | 50mA |
Collector-Base Capacitance-Max | 0.85pF |
Noise Figure (dB Typ @ f) | 5dB @ 500MHz |
Height | 4.01mm |
Length | 4.77mm |
Width | 2.41mm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |