Parameters | |
---|---|
Max Collector Current | 2A |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 175MHz |
Collector Emitter Saturation Voltage | 230mV |
Collector Base Voltage (VCBO) | 120V |
Emitter Base Voltage (VEBO) | 5V |
Continuous Collector Current | 2A |
Height | 4.01mm |
Length | 4.77mm |
Width | 2.41mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | E-Line-3 |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~200°C TJ |
Packaging | Bulk |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated DC | 100V |
Max Power Dissipation | 1W |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 2A |
Frequency | 175MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZTX653 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Gain Bandwidth Product | 175MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 100V |