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ZTX849

ZTX849 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZTX849
  • Package: E-Line-3
  • Datasheet: PDF
  • Stock: 551
  • Description: ZTX849 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZTX849
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 5A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 180mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 5A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 1.2W
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 100MHz
See Relate Datesheet

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