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ZTX855

ZTX855 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZTX855
  • Package: E-Line-3
  • Datasheet: PDF
  • Stock: 912
  • Description: ZTX855 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 150V
Max Power Dissipation 1.2W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 90MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Gain Bandwidth Product 90MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 90MHz
Collector Emitter Saturation Voltage 210mV
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 4A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
See Relate Datesheet

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