ZVN3320FTA
| Parameters | |
|---|---|
| Number of Pins | 3 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 25Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 60mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 330mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 330mW |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 25 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60mA Ta |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 60mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.06A |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 1A |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1.02mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
See Relate Datesheet
