banner_page

ZVN4106FTA

MOSFET N-CH 60V 200MA SOT23-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZVN4106FTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 560
  • Description: MOSFET N-CH 60V 200MA SOT23-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 35pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 6 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 8 pF
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good