Parameters | |
---|---|
Part Status | Active |
Length | 4.77mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Width | 2.41mm |
Radiation Hardening | No |
Number of Terminations | 3 |
REACH SVHC | No SVHC |
ECCN Code | EAR99 |
Resistance | 1Ohm |
RoHS Status | ROHS3 Compliant |
Terminal Finish | Matte Tin (Sn) |
Lead Free | Lead Free |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 600mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 700mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 700mW |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 600mA Ta |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Factory Lead Time | 1 Week |
Vgs (Max) | ±20V |
Mount | Through Hole |
Fall Time (Typ) | 12 ns |
Mounting Type | Through Hole |
Turn-Off Delay Time | 12 ns |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Continuous Drain Current (ID) | 600mA |
Number of Pins | 3 |
Threshold Voltage | 3V |
Weight | 453.59237mg |
Gate to Source Voltage (Vgs) | 20V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Drain Current-Max (Abs) (ID) | 0.6A |
Packaging | Bulk |
Drain to Source Breakdown Voltage | 60V |
Published | 2006 |
JESD-609 Code | e3 |
Feedback Cap-Max (Crss) | 20 pF |
Pbfree Code | yes |
Height | 4.01mm |