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ZVN4206AV

MOSFET N-CH 60V 600MA TO92-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZVN4206AV
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 406
  • Description: MOSFET N-CH 60V 600MA TO92-3 (Kg)

Details

Tags

Parameters
Part Status Active
Length 4.77mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 2.41mm
Radiation Hardening No
Number of Terminations 3
REACH SVHC No SVHC
ECCN Code EAR99
Resistance 1Ohm
RoHS Status ROHS3 Compliant
Terminal Finish Matte Tin (Sn)
Lead Free Lead Free
Additional Feature AVALANCHE RATED
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Ta
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Factory Lead Time 1 Week
Vgs (Max) ±20V
Mount Through Hole
Fall Time (Typ) 12 ns
Mounting Type Through Hole
Turn-Off Delay Time 12 ns
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Continuous Drain Current (ID) 600mA
Number of Pins 3
Threshold Voltage 3V
Weight 453.59237mg
Gate to Source Voltage (Vgs) 20V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Drain Current-Max (Abs) (ID) 0.6A
Packaging Bulk
Drain to Source Breakdown Voltage 60V
Published 2006
JESD-609 Code e3
Feedback Cap-Max (Crss) 20 pF
Pbfree Code yes
Height 4.01mm
See Relate Datesheet

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