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ZVN4210A

MOSFET N-CH 100V 450MA TO92-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZVN4210A
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 877
  • Description: MOSFET N-CH 100V 450MA TO92-3 (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 450mA
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.45A
Drain to Source Breakdown Voltage 100V
Height 4.95mm
Length 4.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 450mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
See Relate Datesheet

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