Parameters | |
---|---|
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 450mA |
Threshold Voltage | 2.4V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.45A |
Drain to Source Breakdown Voltage | 100V |
Height | 4.95mm |
Length | 4.95mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 1997 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 1.5Ohm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 450mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 700mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 700mW |
Turn On Delay Time | 4 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.5 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 450mA Ta |
Rise Time | 8ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8 ns |